MPQ2906 mpq2907 pnp silicon quad transistor description: the central semiconductor MPQ2906, mpq2907 types are comprised of four independent pnp silicon transistors mounted in a 14-pin dip, designed for small signal, general purpose amplifier and switching applications. marking: full part number maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 5.0 v continuous collector current i c 600 ma power dissipation (per transistor) p d 650 mw power dissipation (total package) p d 2.0 w operating and storage junction temperature t j , t stg -65 to +150 c electrical characteristics per transistor: (t a =25c) symbol test conditions min typ max units i cbo v cb =30v 50 na i ebo v eb =3.0v 50 na bv cbo i c =10a 60 v bv ceo i c =10ma 40 v bv ebo i e =10a 5.0 v v ce(sat) i c =150ma, i b =15ma 0.4 v v ce(sat) i c =300ma, i b =30ma 1.6 v v be(sat) i c =150ma, i b =15ma 1.3 v v be(sat) i c =300ma, i b =30ma 2.6 v f t v ce =20v, i c =50ma, f=100mhz 200 mhz c ob v cb =10v, i e =0, f=1.0mhz 8.0 pf c ib v be =2.0v, i c =0, f=1.0mhz 30 pf t on v cc =30v, i c =150ma, i b1 =15ma 30 ns t off v cc =6.0v, i c =150ma, i b1 =i b2 =15ma 150 ns MPQ2906 mpq2907 min max min max h fe v ce =10v, i c =10ma 35 - 75 - h fe v ce =10v, i c =150ma 40 - 100 - h fe v ce =10v, i c =300ma 30 - 50 - to-116 case r1 (30-january 2012) www.centralsemi.com
MPQ2906 mpq2907 pnp silicon quad transistor to-116 case - mechanical outline lead code: 1) collector q1 8) collector q3 2) base q1 9) base q3 3) emitter q1 10) emitter q3 4) no connection 11) no connection 5) emitter q2 12) emitter q4 6) base q2 13) base q4 7) collector q2 14) collector q4 marking: full part number pin configuration www.centralsemi.com r1 (30-january 2012)
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